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Two-octaves spanning supercontinuum generation in nitrogen-rich silicon nitride

Abstract

Here we experimentally demonstrate two-octave spanning supercontinuum generation in nitrogen-rich silicon nitride waveguides fabricated through backend CMOS compatible processes. Experimental results are in good agreement with our numerical calculations.
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Dates and versions

hal-02933340 , version 1 (15-09-2020)

Identifiers

  • HAL Id : hal-02933340 , version 1

Cite

Christian Lafforgue, Sylvain Guerber, Joan Manel Ramírez, Xavier Le Roux, Guillaume Marcaud, et al.. Two-octaves spanning supercontinuum generation in nitrogen-rich silicon nitride. Photonics North, May 2019, Quebec city, Canada. ⟨hal-02933340⟩
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