Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe 2
Résumé
Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce mag-netism in the material. We report on the atomic structure and electronic properties of monolayerWSe2intentionally doped with vanadium atoms by means of scanning transmission electron mi-croscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate atW sites. These VWdopants are negatively charged, which induces a localized bound state located140 meV above the valence band maximum. The overlap of the electronic potential of two chargedVWdopants generates additional in-gap states. Eventually, the negative charge may suppress themagnetic moment on the VW dopants
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