Loss assessment in random crystal polarity gallium phosphide microdisks grown on silicon - Archive ouverte HAL
Journal Articles Optics Letters Year : 2020

Loss assessment in random crystal polarity gallium phosphide microdisks grown on silicon

Abstract

III-V semiconductors grown on silicon recently appeared as a promising platform to decrease the costs of photonic components and circuits. For nonlinear optics, specific features of the III-V crystal arising from the growth on the nonpolar Si substrate and called antiphase domains, offer a unique way to engineer the second order properties of the semiconductor compound. Here, we demonstrate the fabrication of microdisk resonators at the interface between a gallium phosphide layer and its silicon substrate. The analysis of the whispering gallery mode quality factors in the devices allows the quantitative assessment of losses induced by a controlled distribution of antiphase domains in the GaP layer and demonstrate the relevance of such a platform for the development of polarity-engineered III-V nonlinear photonic devices on silicon.
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Dates and versions

hal-02926153 , version 1 (31-08-2020)

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Rasool Saleem-Urothodi, Julie Le Pouliquen, Tony Rohel, Rozenn Bernard, Christelle Pareige, et al.. Loss assessment in random crystal polarity gallium phosphide microdisks grown on silicon. Optics Letters, 2020, 45 (16), pp.4646. ⟨10.1364/OL.399935⟩. ⟨hal-02926153⟩
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