Loss assessment in random crystal polarity gallium phosphide microdisks grown on silicon - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Optics Letters Année : 2020

Loss assessment in random crystal polarity gallium phosphide microdisks grown on silicon

Résumé

III-V semiconductors grown on silicon recently appeared as a promising platform to decrease the costs of photonic components and circuits. For nonlinear optics, specific features of the III-V crystal arising from the growth on the nonpolar Si substrate and called antiphase domains, offer a unique way to engineer the second order properties of the semiconductor compound. Here, we demonstrate the fabrication of microdisk resonators at the interface between a gallium phosphide layer and its silicon substrate. The analysis of the whispering gallery mode quality factors in the devices allows the quantitative assessment of losses induced by a controlled distribution of antiphase domains in the GaP layer and demonstrate the relevance of such a platform for the development of polarity-engineered III-V nonlinear photonic devices on silicon.
Fichier principal
Vignette du fichier
OL_Urothodi2020_revised_hal.pdf (682.32 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02926153 , version 1 (31-08-2020)

Identifiants

Citer

Rasool Saleem-Urothodi, Julie Le Pouliquen, Tony Rohel, Rozenn Bernard, Christelle Pareige, et al.. Loss assessment in random crystal polarity gallium phosphide microdisks grown on silicon. Optics Letters, 2020, 45 (16), pp.4646. ⟨10.1364/OL.399935⟩. ⟨hal-02926153⟩
135 Consultations
232 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More