Loss assessment in random crystal polarity gallium phosphide microdisks grown on silicon
Résumé
III-V semiconductors grown on silicon recently appeared as a promising platform to decrease the costs of photonic components and circuits. For nonlinear optics, specific features of the III-V crystal arising from the growth on the nonpolar Si substrate and called antiphase domains, offer a unique way to engineer the second order properties of the semiconductor compound. Here, we demonstrate the fabrication of microdisk resonators at the interface between a gallium phosphide layer and its silicon substrate. The analysis of the whispering gallery mode quality factors in the devices allows the quantitative assessment of losses induced by a controlled distribution of antiphase domains in the GaP layer and demonstrate the relevance of such a platform for the development of polarity-engineered III-V nonlinear photonic devices on silicon.
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