Article Dans Une Revue Journal of Crystal Growth Année : 2005

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

Résumé

In this work, AlGaN/GaN high electron mobility transistors have been grown by ammonia source molecular beam epitaxy (MBE) on silicon (1 1 1), silicon carbide and GaN templates on sapphire. The structural and electrical properties of these layers have been studied in order to determine the impact of substrate choice and buffer layer on active layer quality. Furthermore, an intercalated AlN layer grown on a GaN template is shown to enhance the insulating properties of the buffer.

Dates et versions

hal-02906611 , version 1 (25-07-2020)

Identifiants

Citer

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, et al.. Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates. Journal of Crystal Growth, 2005, 278 (1-4), pp.383-386. ⟨10.1016/j.jcrysgro.2005.01.037⟩. ⟨hal-02906611⟩
91 Consultations
0 Téléchargements

Altmetric

Partager

  • More