Article Dans Une Revue MRS Online Proceedings Library Année : 2001

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele
  • Fonction : Auteur
T. Rotter
  • Fonction : Auteur
K.S. Röver
  • Fonction : Auteur
M. Seyboth
  • Fonction : Auteur
V. Schwegler
  • Fonction : Auteur
J. Stemmer
  • Fonction : Auteur
F. Fedler
  • Fonction : Auteur
H. Klausing
  • Fonction : Auteur
O.K. Semchinova
  • Fonction : Auteur
J. Aderhold
  • Fonction : Auteur
J. Graul
  • Fonction : Auteur

Résumé

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate leakage current and controllability of the drain current ID. The MOSHEFTs work also at positive gate voltages in accumulation, which is also demonstrated in a broad transconductance peak. The PEC oxidation shows low density of interface states Dit and the insulating properties depend strongly on the PEC conditions. Pre-treatments before the SiO2 deposition result in varying threshold voltages |Vth| and it seems that (NH4)Sx pre-treatment leaves the surface in best conditions. Comparison of Ti/Al and Ti/Al/Ti/Au as source/drain contacts for AlGaN/GaN HFETs are done and the annealing behavior of Ti/Al/Ti/Au is displayed resulting in contact resistance as low as R_C = 2 &mm after annealing at 850°C in N2.

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Dates et versions

hal-02906500 , version 1 (24-07-2020)

Identifiants

Citer

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, et al.. AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments. MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩
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