Preliminary Synthesis of Carbon Nitride Thin Films by N2/CH4 Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Films - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Plasma Processes and Polymers Année : 2007

Preliminary Synthesis of Carbon Nitride Thin Films by N2/CH4 Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Films

Résumé

The present work deals with the synthesis of crystalline carbon nitride thin films by microwave plasma assisted chemical vapour deposition in N2/CH4 gas mixture. The discharge analysis by optical emission spectroscopy shows that the increase in the CH4/N2 ratio involves an important production of the CN and C2 radicals. In the films X-ray energy dispersion spectroscopy shows that the N/C ratio decreases when the CH4 percentage in N2 increases. Xray diffraction and electron diffraction are used to study the carbon nitride films nature. Scanning electron microscopy shows that the films consisted of nano-crystalline grains. Carbon balls are also present on the film surface for CH4 percentage higher than 4%. The transmission electron microscopy confirms the nano-structure of the film and shows the isotropic etching of the substrates, during the film growth.
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hal-02900049 , version 1 (09-09-2021)

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Paul Kouakou, Valerie Brien, Badreddine Assouar, Virginie Hody, Mohammed Belmahi, et al.. Preliminary Synthesis of Carbon Nitride Thin Films by N2/CH4 Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Films. Plasma Processes and Polymers, 2007, 4 (S1), pp.S210-S214. ⟨10.1002/ppap.200730703⟩. ⟨hal-02900049⟩
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