Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry

Résumé

This work reports on the characterization of the decomposition of GaN layers epitaxied on c-plane Sapphire substrate by Differential Scanning Calorimetry. Many configurations have been characterized from two different GaN epilayer providers with a large range of doping concentrations from Non-intentionally Doped layers up to 2x1019 cm-3. All intentionally doped layers exhibit an endothermic reaction starting at 200-300 °C while the NiD layer thermogram is the same as the blank experiment. XPS and SEM observations demonstrated that the endothermic reaction is related to the GaN decomposition through Threading Dislocation and nanoPipe.

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hal-02865482 , version 1 (11-06-2020)

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Nicolas Thierry-Jebali, Rodica Chiriac, Christian Brylinski. Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry. 15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyazaki, Japan. pp.1185-1188, ⟨10.4028/www.scientific.net/MSF.778-780.1185⟩. ⟨hal-02865482⟩
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