Article Dans Une Revue Materials Science Forum Année : 2011

Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride

Résumé

Ohmic contacts represent a major technological brick for the development of high power devices on Gallium Nitride. Al(200 nm) Ti(70 nm) metallization on n+-GaN, annealed at 650 °C, provides a “Specific Contact Resistivity” (SCR) in the range mid 10-5 Ω.cm², which is low enough for the main switching power applications. However, the Al-Ti metallic compound phases formed during the annealing step result from solid-solid reactions, which may lead to high stress and / or poor cohesion, possibly deleterious to contact reliability. In this work, we have investigated several configurations of Ti-Al-Si based contacts, aiming at favoring liquid-solid reactions and / or Si element diffusion, in order to get better SCR and / or morphology and cohesion of the metallic phase. Surprisingly, only contacts annealed at low temperature (450 °C) provide low contact SCR, comparable to that of Ti-Al only contact, but systematically higher.

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Dates et versions

hal-02735359 , version 1 (02-06-2020)

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Nicolas Thierry-Jebali, Olivier Ménard, Arnaud Yvon, Emmanuel Collard, Miao Zhe, et al.. Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride. Materials Science Forum, 2011, 679-680, pp.812-815. ⟨10.4028/www.scientific.net/MSF.679-680.812⟩. ⟨hal-02735359⟩
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