In situ measurement of AlAs and GaAs refractive index dispersion at epitaxial growth temperature
Résumé
In situ molecular beam epitaxy control of III-V optoelectronic device growth has been achieved by dynamic optical reflectometry with tunable excitation wavelength, through the use of a titanium:sapphire laser light source. This new multi-wavelength reflectometry method was used to determine the values of the AlAs and GaAs refractive indices at growth temperature (600 °C). Index dispersion between 760 and 960 nm is presented and found to be in good agreement with the existing models.
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