Comprehensive Study on Chip-Integrated Germanium Pin Photodetectors for Energy-Efficient Silicon Interconnects
Résumé
Optical interconnects are promising alternatives to copper-based wirings in on-chip communications. Recent advances in integrated group-IV nanophotonics should address a range of challenges related with speed, energy consumption and cost. Monolithically integrated germanium pin photodetectors on silicon-on-insulator (SOI) waveguides are indispensable devices in this buoyant research field. Here, we comprehensively investigate the opto-electrical properties of hetero-structured pin photodetectors. All photodetectors were fabricated on top of 200-mm SOI substrates using industrial-scale semiconductor manufacturing processes. Under a low-bias voltage supply of 1 V, pin photodetectors exhibit dark-currents from 5 nA to 100 nA, dark current densities from 0.404 A/cm 2 to 0.808 A/cm 2 , responsivities in a range of 0.17 A/W to 1.16 A/W, and cutoff frequencies from 7 GHz to 35 GHz, respectively. Such achievements make them promising for use in power-efficient optical links operating at 40 Gbps, with a device energy dissipation of only few fJ per bit. Index Terms-Complementary metal-oxide-semiconductor technology, germanium photodetectors, inter-and intra-chip interconnects, optical communications, silicon nanophotonics.
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08J_Benedikovic et al. - 2019 - IEEE Journal of Quantum Electronics.pdf (1.08 Mo)
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