High-speed germanium pin photodiodes integrated on silicon-on-insulator nanophotonic waveguides - Archive ouverte HAL Access content directly
Conference Papers Year : 2019

High-speed germanium pin photodiodes integrated on silicon-on-insulator nanophotonic waveguides

E Cassan
C Baudot
  • Function : Author
F Boeuf
  • Function : Author

Abstract

Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of-13.9,-12.7, and-11.3 dBm.
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Dates and versions

hal-02539561 , version 1 (10-04-2020)

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D. Benedikovic, L. Virot, G Aubin, J.-M Hartmann, B. Szelag, et al.. High-speed germanium pin photodiodes integrated on silicon-on-insulator nanophotonic waveguides. 16th IEEE International Conference on Group IV Photonics, Aug 2019, Singapore, Singapore. ⟨10.1109/GROUP4.2019.8926080⟩. ⟨hal-02539561⟩
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