Study of the radiated immunity of a drain-source current sensor using Near Field Scan Immunity method - Archive ouverte HAL
Communication Dans Un Congrès Année : 2019

Study of the radiated immunity of a drain-source current sensor using Near Field Scan Immunity method

Résumé

The Near Field Scan Immunity (NFSI) method developed to evaluate the susceptibility level of Integrated Circuits (IC) could be used with appropriate probes to perform a quick investigation at application board level. This paper presents the study of a drain-source current sensor typically used in DC/DC converter.
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Dates et versions

hal-02523743 , version 1 (29-03-2020)

Identifiants

Citer

André Durier, Sonia Ben Dhia, Tristan Dubois. Study of the radiated immunity of a drain-source current sensor using Near Field Scan Immunity method. 2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo), Oct 2019, Hangzhou, China. pp.52-54, ⟨10.1109/EMCCompo.2019.8919720⟩. ⟨hal-02523743⟩
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