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Article Dans Une Revue RSC Advances Année : 2020

Transport properties of polycrystalline SnTe prepared by saturation annealing

Shantanu Misra
Sylvie Migot
Jaafar Ghanbaja
Anne Dauscher
Bernard Malaman
Christophe Candolfi
Bertrand Lenoir

Résumé

Because the binary chalcogenide SnTe is an interesting Pb-free alternative to the state-of-the-art thermoelectric material PbTe, significant efforts were devoted to the optimization of its thermoelectric properties over the last few years. Here, we show that saturation-annealing treatments performed at 823, 873 or 973 K under Sn-rich conditions provide a successful strategy to prepare polycrystalline samples with a controlled concentration of Sn vacancies. Both scanning transmission electron microscopy and Mössbauer spectroscopy demonstrate the absence of Sn-rich areas at the grain boundaries in the saturation-annealed samples. Transport property measurements, performed over a wide range of temperatures (5-800 K), show that this technique enables achieving thermoelectric performances at 800 K similar to those obtained using Sn self-compensation. The three saturation annealing temperatures result in comparable transport properties across the entire temperature range due to similar hole concentrations ranging between 1.0 and 1.5 x 1020 cm-3 at 300 K. As equally observed in samples prepared by other synthetic routes, the temperature dependence of the Hall mobility evidences that charge transport is strongly affected by point-defect scattering caused by the random distribution of Sn vacancies.
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Dates et versions

hal-02516923 , version 1 (24-03-2020)

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Dorra Ibrahim, Shantanu Misra, Sylvie Migot, Jaafar Ghanbaja, Anne Dauscher, et al.. Transport properties of polycrystalline SnTe prepared by saturation annealing. RSC Advances, 2020, 10 (10), pp.5996-6005. ⟨10.1039/c9ra10841f⟩. ⟨hal-02516923⟩
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