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Communication Dans Un Congrès Année : 2016

High voltage SiC MOSFET Opportunities for Dielectric Barrier Discharge Transformerless Power Supply

Mame Andallah Diop
Antoine Belinger
Hubert Piquet

Résumé

From an electrical point of view, cold plasmas are complex loads to control. For ignition, high voltages are required , and once established, the plasma can easily go into the arc regime (thermal plasma). In Dielectric Barrier Discharge (DBD) setups, at least one dielectric is placed between the two metallic electrodes that supply the gas. Current flowing through the plasma also charges these dielectrics: their voltages increase and the gas voltage also decreases. Through this limiting mechanism, the dielectric barriers limit the current and therefore prevent from going into the arc regime. This property makes the DBD particularly appealing in various applications that require plasmas with low temperatures: UV excimer lamps, thin film deposition, surface treatment, disinfection. Our developments are geared toward DBD UV lamps [1], but the approach proposed is applicable to any DBD setup (plane-plane setup for thin film deposit was also tested). The capacitive character of the dielectrics requires supplying DBDs using an alternative source. Furthermore, to ignite the discharge at atmospheric pressure, the required voltage usually reaches several kilovolts. This high alternating voltage is traditionally obtained via amplification using a step-up transformer. Unfortunately, the parasitic capacitances of the latter (inter-turn and inter-winding) limit the power transfer: these capacitances have generally low values but often are of the same order of magnitude as those of the DBD. It is parallel to the DBD, so it diverts a significant proportion of the current transferred. This slows down the voltage rise and delays the ignition. This increases the OFF time, during which the excited species created by the previous discharge disappear. In some processes this can even change the behavior of the discharge. As a matter of fact, the main consequences of the parasitic capacitance of the transformer concern the functioning of the discharge and not the energetic efficiency of the system. These reasons incited us to investigate power supplies for DBD without transformer.
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hal-02514784 , version 1 (22-03-2020)

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  • HAL Id : hal-02514784 , version 1

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Mame Andallah Diop, Antoine Belinger, Hubert Piquet. High voltage SiC MOSFET Opportunities for Dielectric Barrier Discharge Transformerless Power Supply. 6th Euro-Asian Pulsed Power Conference (EAPPC 2016), Sep 2016, Estoril, Portugal. ⟨hal-02514784⟩
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