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Poster De Conférence Année : 2017

III-nitrides based electro-optic modulators

Résumé

III-nitride materials deposited on sapphire and silicon, are considered mature semi-conductorsfor applications in photonics and optoelectronics. Unlike highly temperature sensitive optical waveguides made on more traditional materials such as InP, Gallium Nitride (GaN) is a good candidate for optical applications in harsh environments. Previous electrooptic investigations demonstrated an index modulation of Δn~ 10-2 within the active layer, indicating the suitability of such structure for RF-optoelectronics. We explore here the potential of designing and fabricating high speed optical modulators for low wavelength operation. New modulator configurations need to be developed to enhance the requirements of commercial products in terms of propagation losses, modulation bandwidth, power and driving voltage.. We report the modeling and design of optoelectronic devices using OptiBPM and Optiwave commercial tools with an objective to extract the opto-geometrical parameters for the active region and the topology necessary for the RF coplanar transmission line (CPW). The devices necessary for this purpose are fabricated using GaN templates grown by MOCVD. The selected design and fabrication process ensure monomode propagation in the channel waveguide. Special attention has been paid to theetching process, which is optimized for lowering the sidewall roughness and thus controlling the optical losses, as well as, the realization of n and p type contacts. The devices were characterized to evaluate the possibility of obtaining highly temperature insensitive refractive index values and low loss properties. In summary, we report a global approach for realizing III-Nitride based optical modulator devices.
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Dates et versions

hal-02487284 , version 1 (21-02-2020)

Identifiants

  • HAL Id : hal-02487284 , version 1

Citer

Bandar Alshehri, Mohammed El Gibari, Li Hong Wu, Dimitri Pavlidis, El Hadj Dogheche. III-nitrides based electro-optic modulators. International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France. . ⟨hal-02487284⟩
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