THz emission enhancement in FET/HEMT due to excess electrons in channel-under-gate regions - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2011

THz emission enhancement in FET/HEMT due to excess electrons in channel-under-gate regions

Domaines

Electronique
Fichier non déposé

Dates et versions

hal-02455717 , version 1 (26-01-2020)

Identifiants

  • HAL Id : hal-02455717 , version 1

Citer

V. Gružinskis, P. Shiktorov, E. Starikov, A. Penot, P. Nouvel, et al.. THz emission enhancement in FET/HEMT due to excess electrons in channel-under-gate regions. 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Umesh Mishra and Stephen M. Goodnick, 2011, Santa Barbara, United States. ⟨hal-02455717⟩
10 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More