Long-Term Memory Effects in Photo-Excited InGaAs High-Electron-Mobility- Transistors - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2011

Long-Term Memory Effects in Photo-Excited InGaAs High-Electron-Mobility- Transistors

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Electronique
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hal-02455713 , version 1 (26-01-2020)

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  • HAL Id : hal-02455713 , version 1

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L. Tohme, S. Blin, P. Nouvel, J. Torres, J. Wang, et al.. Long-Term Memory Effects in Photo-Excited InGaAs High-Electron-Mobility- Transistors. 17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, U. Misra and S. Goodnick, 2011, Santa Barbara, United States. ⟨hal-02455713⟩
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