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Article Dans Une Revue Solid State Communications Année : 1997

Modelling of gate-induced spin precession in a striped channel high electron mobility transistor

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hal-02451938 , version 1 (23-01-2020)

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A. Bournel, P. Dollfus, S Galdin, F.-X Musalem, P. Hesto. Modelling of gate-induced spin precession in a striped channel high electron mobility transistor. Solid State Communications, 1997, 104 (2), pp.85-89. ⟨10.1016/S0038-1098(97)00278-0⟩. ⟨hal-02451938⟩
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