SIC Power Devices in Power Electronics: An Overview
Résumé
Silicon (Si) power devices have dominated the
world of Power Electronics in the last years, and they have
proven to be efficient in a wide range of applications. But
high power, high frequency and high temperature
applications require more than Si can deliver. With the
advance of technology, Silicon Carbide (SiC) and Gallium
Nitride (GaN) power devices have evolved from immature
prototypes in laboratories to a viable alternative to Si-based
power devices in high-efficiency and high-power density
applications. SiC and GaN devices have several compelling
advantages: high-breakdown voltage, high-operating
electric field, high-operating temperature, high-switching
frequency and low losses. This paper provides a general
review on the properties of these materials comparing some
performance between Si and SiC devices for typical power
electronics applications. Based on studied information, line
of progress and the current state of developing, SiC seems
to be the most viable substitute in high power and high
temperature applications in the mid-term of Si, due to the
fact that the GaN is still used in a reduced number of
applications.