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Article Dans Une Revue physica status solidi (a) Année : 2009

Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers

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In this work, we present a study about the homoepitaxial growth of phosphorus-doped diamond on (100) substrates. The growth was performed by microwave plasma assisted chemical vapor deposition (MPCVD) adding an organic precursor for phosphorus (tertiarybutylphosphine: TBP) in the gaseous phase. We show that phosphorus is incorporated in (100) chemical vapor deposition (CVD) diamond as proved by secondary ion mass spectrometry (SIMS). The recombination of excitons bound to phosphorus donors is observed by cathodoluminescence (CL) spectroscopy. The influence of the growth parameters on the phosphorus donor activity is investigated. We show that the [C*]/[H 2 ] ratio is a key parameter for controlling the P-donor activity when diamond is grown on (100) surfaces.
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hal-02442483 , version 1 (24-11-2022)

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Georges Frangieh, Marie-Amandine Pinault-Thaury, Julien Barjon, Thomas Tillocher, François Jomard, et al.. Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers. physica status solidi (a), 2009, Special Issue : Hasselt Diamond Workshop 2009 - SBDD XIV, 206 (9), pp.2000-2003. ⟨10.1002/pssa.200982223⟩. ⟨hal-02442483⟩
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