New Process for Electrical Contacts on (100) N-type Diamond
Abstract
Obtaining ohmic contacts on n-type diamond is a very compelling concern in the framework of designing power electronic devices. The present contribution considers a new technological process combining microstructuration and highly phosphorus-doped overgrowth to investigate quasi-ohmic contacts on (100) phosphorus doped diamond. For now, the two processes were tested on (100) and (111) diamond single crystal substrates. The results are exposed and discussed.
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New process for electrical contacts on 100 n type diamond_submitted manuscript.pdf (928.21 Ko)
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