Thick and widened high quality heavily boron doped diamond single crystals synthetized with high oxygen flow under high microwave power regime
Résumé
The aim of this paper is to optimize the growth conditions of thick boron doped diamond single crystals, which requires the use of high microware power density to have high growth rate, in order to allow enlarging CVD deposited layers keeping both high boron doping level and high crystal quality. It is shown that the use of a high amount of oxygen (1 to 2%) in the gas phase leads to 1 mm lateral growth after the growth of 500 μm thick CVD diamond layer. Thus, the surface is increased from 10 mm² to 18 mm². The obtained films exhibit high crystal quality confirmed by Raman spectroscopy and confocal microscopy. Depending on the gas composition introduced in the reactor, the boron concentration varied between 5×1019 at/cm3 and 3×1020 at/cm3 as measured by SIMS.
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DIAM_DRM2019 MAPT_LSPM Thick and widened high quality heavily boron doped diamond.pdf (560.51 Ko)
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