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Article Dans Une Revue Solid-State Electronics Année : 2018

Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena

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hal-02438735 , version 1 (14-01-2020)

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B. Nafaa, B Cretu, N. Ismail, O. Touayar, R. Carin, et al.. Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena. Solid-State Electronics, 2018, 150, pp.1-7. ⟨10.1016/j.sse.2018.08.010⟩. ⟨hal-02438735⟩
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