Article Dans Une Revue Solid-State Electronics Année : 2018

Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

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hal-02438730 , version 1 (14-01-2020)

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D. Boudier, B Cretu, E. Simoen, A. Veloso, N. Collaert. Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures. Solid-State Electronics, 2018, 143, pp.27-32. ⟨10.1016/j.sse.2018.02.015⟩. ⟨hal-02438730⟩
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