Demonstration of Magnetoplasmon Polariton at InSb/dielectric Interface
Résumé
Abstract:
A surface plasmon resonance (SPR) in terahertz range is demonstrated in InSb. Using an Otto configuration, the surface plasmon is excited on the interface between semiconductor and a thin polymer film by silicon prism. Due to the low effective mass of InSb it is possible to tune SPR by an external magnetic field in transversal configuration. It is possible to achieve resonance shift up to 100 GHz with magnetic field 0.25 T. The experimental results show good agreement with the theoretical model.