Effect of AlGaAs composition on the type-I to type-II transition in AlInAs/AlGaAs self-assembled quantum dots - Archive ouverte HAL
Article Dans Une Revue Semiconductor Science and Technology Année : 2015

Effect of AlGaAs composition on the type-I to type-II transition in AlInAs/AlGaAs self-assembled quantum dots

R Neffati
  • Fonction : Auteur
I. Saidi
  • Fonction : Auteur
S Ben Ben Radhia
  • Fonction : Auteur

Résumé

We study the transition from type-I to type-II AlInAs/AlGaAs self-assembled quantum dots (QDs) which is induced by changing the Al composition of an AlGaAs matrix. We found theoretical evidence for type-II band alignment above the crossover Al concentration > = x x (0.43) c. For this purpose, we obtained the phase diagram for different QD radii, and we can identify the region where the electron states derived from the X-valley are lower than those derived from the Γ-point. The spatial distribution of electrons and holes is very sensitive to QD size variations. Furthermore, the effect of the QD type on the exciton binding energy is investigated. The ground-state exciton binding energy is always significantly smaller for type-II than for corresponding type-I systems, which originates from the redistribution of the electron and hole wave function.
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Dates et versions

hal-02390135 , version 1 (16-01-2020)

Identifiants

Citer

R Neffati, I. Saidi, S Ben Ben Radhia, K. Boujdaria, C. Testelin. Effect of AlGaAs composition on the type-I to type-II transition in AlInAs/AlGaAs self-assembled quantum dots. Semiconductor Science and Technology, 2015, 30 (8), pp.085008. ⟨10.1088/0268-1242/30/8/085008⟩. ⟨hal-02390135⟩
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