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Communication Dans Un Congrès Année : 2019

Advances in Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating conditions for reliability-aware circuit design

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hal-02386290 , version 1 (29-11-2019)

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  • HAL Id : hal-02386290 , version 1

Citer

C Mukherjee, F. Marc, M Couret, G G Fischer, M Jaoul, et al.. Advances in Aging Compact Model for Hot Carrier Degradation in SiGe HBTs under Dynamic Operating conditions for reliability-aware circuit design. European Microwave Week Workshop Recent advances in SiGe BiCMOS: technologies, modelling & circuits for 5G, radar & imaging, Sep 2019, Paris, France. ⟨hal-02386290⟩
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