Light emission from localised point defects induced in GaN crystal by a femtosecond-pulsed laser - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Optical Materials Express Année : 2018

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hal-02385641 , version 1 (28-11-2019)

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Umar Saleem, Muhammad Danang Birowosuto, Songyan Hou, Ange Maurice, Tay Beng Kang, et al.. Light emission from localised point defects induced in GaN crystal by a femtosecond-pulsed laser. Optical Materials Express, 2018, 8 (9), pp.2703. ⟨10.1364/OME.8.002703⟩. ⟨hal-02385641⟩
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