Electroless deposition of NiMoPB : electrical performances and material properties
Résumé
Electroless deposited Co-based caps are convicing alternatives to standard SiC(N) barriers for the 45 nm node and beyond to improve electromigration resistance and limit the dielectric constant of the structures. In this work, growth kinetics, process selectivity, microstructure and composition of an alternative self-initiated NiMoPB cap are reported for 300 mm fabrication. This process is very selective, and does not modify the electrical performances of the structures. The film presents very promising barrier properties against copper diffusion, due to a high quantity of phosphorus and refractory metal in the fihn.