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Poster De Conférence Année : 2007

Electroless deposition of NiMoPB : electrical performances and material properties

Résumé

Electroless deposited Co-based caps are convicing alternatives to standard SiC(N) barriers for the 45 nm node and beyond to improve electromigration resistance and limit the dielectric constant of the structures. In this work, growth kinetics, process selectivity, microstructure and composition of an alternative self-initiated NiMoPB cap are reported for 300 mm fabrication. This process is very selective, and does not modify the electrical performances of the structures. The film presents very promising barrier properties against copper diffusion, due to a high quantity of phosphorus and refractory metal in the fihn.
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Dates et versions

hal-02384103 , version 1 (28-11-2019)

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  • HAL Id : hal-02384103 , version 1

Citer

Tifenn Decorps, Ségolene Olivier, Maria-Luisa Calvo-Muñoz, Paul-Henri Haumesser, Frédéric Fillot, et al.. Electroless deposition of NiMoPB : electrical performances and material properties. Advanced Metallization Conference 2007, Oct 2007, Albany, United States. MRS Conference Proceedings, XXIII, pp.31-37, 2008. ⟨hal-02384103⟩
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