The reliability of SiGe HBTs related to hot-carrier (HC) degradation is investigated using compact model including aging laws to quantify the output DC supply current variation of a driver amplifier. A physic-based aging compact model taking into account the reaction-diffusion model as well as the Fick hydrogen diffusion law is formulated and implemented in HICUM compact model. The model has been validated thanks to HBT aging tests results under several stress conditions allowing to extract its parameters. At circuit level, the reliability of the broadband amplifier has been investigated under dynamic operating conditions leading to locate and quantify the impact of HC degradation according to HBT load charge.