Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current

Résumé

The reliability of SiGe HBTs related to hot-carrier (HC) degradation is investigated using compact model including aging laws to quantify the output DC supply current variation of a driver amplifier. A physic-based aging compact model taking into account the reaction-diffusion model as well as the Fick hydrogen diffusion law is formulated and implemented in HICUM compact model. The model has been validated thanks to HBT aging tests results under several stress conditions allowing to extract its parameters. At circuit level, the reliability of the broadband amplifier has been investigated under dynamic operating conditions leading to locate and quantify the impact of HC degradation according to HBT load charge.
Fichier non déposé

Dates et versions

hal-02379120 , version 1 (25-11-2019)

Identifiants

  • HAL Id : hal-02379120 , version 1

Citer

Marine Couret, Gerhard Fischer, Iria Garcia-Lopez, Magali de Matos, François Marc, et al.. Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current. ESSDERC 2019, Sep 2019, Cracow, Poland. ⟨hal-02379120⟩
59 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More