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Article Dans Une Revue IEEE Journal of Quantum Electronics Année : 2017

Tunable X-Band Optoelectronic Oscillators Based on External-Cavity Semiconductor Lasers

Résumé

Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident on a photodiode to generate the microwave signal, but rather have the option of generating the electrical microwave signal directly as a voltage V(t) at the laser-diode injection terminals under constant current operation; no photodiode need be involved, thus circumventing optical-toelectrical conversion. We achieve a timing jitter of 10 ps and a quality factor of ≳ 2 × 10 5 across the entire X-band, that ranges from 6.79 to 11.48 GHz. Tuning is achieved by varying the injection current J.

Dates et versions

hal-02347801 , version 1 (05-11-2019)

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Citer

Chien-Yuan Chang, Michael Wishon, Daeyoung Choi, Junliang Dong, Kamel Merghem, et al.. Tunable X-Band Optoelectronic Oscillators Based on External-Cavity Semiconductor Lasers. IEEE Journal of Quantum Electronics, 2017, 53 (3), pp.1-6. ⟨10.1109/JQE.2017.2682702⟩. ⟨hal-02347801⟩
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