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Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2011

Spin-dependent photoelectron tunneling from GaAs into magnetic cobalt

Abstract

The spin dependence of the photoelectron tunnel current from free standing GaAs films into outof-plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches ±6% around zero applied tunnel bias and drops to ±2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ≈ 0%.
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Dates and versions

hal-02345792 , version 1 (11-07-2022)

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D. Vu, H. Jurca, F. Maroun, P. Allongue, N. Tournerie, et al.. Spin-dependent photoelectron tunneling from GaAs into magnetic cobalt. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (12), pp.121304(R). ⟨10.1103/PhysRevB.83.121304⟩. ⟨hal-02345792⟩
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