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Article Dans Une Revue Scientific Reports Année : 2011

Moving liquids with light: Photoelectrowetting on semiconductors

Résumé

By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×1014−8×1018 cm−3), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics.
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Origine : Publication financée par une institution
Licence : CC BY NC ND - Paternité - Pas d'utilisation commerciale - Pas de modification

Dates et versions

hal-02345758 , version 1 (11-07-2022)

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Paternité - Pas d'utilisation commerciale - Pas de modification

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S. Arscott. Moving liquids with light: Photoelectrowetting on semiconductors. Scientific Reports, 2011, 1 (1), pp.184. ⟨10.1038/srep00184⟩. ⟨hal-02345758⟩
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