InAs/InP quantum dot VECSEL emitting at 1.5 μm
Résumé
A high-power InAs quantum dot (QDs) vertical-external-cavity surface-emitting laser emitting at 1.5 µm is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on InP substrate. QDs density and emission wavelength was independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layers thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media. AS
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