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Article Dans Une Revue IEEE Journal of the Electron Devices Society Année : 2019

Investigation of $I-V$ Linearity in TaO x -Based RRAM Devices for Neuromorphic Applications

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hal-02332457 , version 1 (24-10-2019)

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Changhyuck Sung, Andrea Padovani, Bastien Beltrando, Donguk Lee, Myunghoon Kwak, et al.. Investigation of $I-V$ Linearity in TaO x -Based RRAM Devices for Neuromorphic Applications. IEEE Journal of the Electron Devices Society, 2019, 7, pp.404-408. ⟨10.1109/JEDS.2019.2902653⟩. ⟨hal-02332457⟩
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