Behavior of SiC at high temperature under helium with low oxygen partial pressure - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of the European Ceramic Society Année : 2008

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hal-02328700 , version 1 (23-10-2019)

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J. Eck, M. Balat-Pichelin, L. Charpentier, E. Beche, F. Audubert. Behavior of SiC at high temperature under helium with low oxygen partial pressure. Journal of the European Ceramic Society, 2008, 28 (15), pp.2995-3004. ⟨10.1016/j.jeurceramsoc.2008.04.032⟩. ⟨hal-02328700⟩
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