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Communication Dans Un Congrès Année : 2018

Formation of SiP2 nanoparticles in heavily P-doped SiO1.5 thin films

Résumé

Si nanocrystals (Si-NCs) embedded in dielectric matrices have been extensively studied due to potential applications in novel opto-or nanoelectronic devices. To reach this goal, a deep understanding of the electrical doping of Si-NCs is, however, mandatory. Both theoretical and experimental studies have shown the possibility to dope Si-NCs with either Boron (B) or Phosphorus (P). However, the exact location of the dopants in the heavy doping regime has received only little attention up to now. In this work, we investigate heavily phosphorus doped SiO1.5 thin films prepared by evaporation under high vacuum. The films were prepared by co-evaporation of both SiO and SiO2 from e-beam guns while phosphorus was supplied by a GaP decomposition source. The structural and optical properties were studied by means of X-ray diffraction (XRD), scanning transmission electron microscopy (STEM), Raman and Fourier transform infrared (FTIR) absorption spectroscopies. For thin films annealed at 1100°C, we provide clear experimental evidence of the formation of both SiP2 and SiP nanoparticles crystallizing in an orthorhombic structure. The overall nanoparticle size increases with the P doping from about 15 to 35 nm. STEM characterizations combined with energy dispersive X-ray spectroscopy measurements indicate that most of the nanoparticles consist of SiP2. This is consistent with Raman measurements and with density functional theory calculations of the SiP2 vibrational properties.
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Dates et versions

hal-02327143 , version 1 (22-10-2019)

Identifiants

  • HAL Id : hal-02327143 , version 1

Citer

S Geiskopf, M. Stoffel, X Devaux, Erwan André, C. Carteret, et al.. Formation of SiP2 nanoparticles in heavily P-doped SiO1.5 thin films. EMRS SPRING MEETING, Jun 2018, Strasbourg, France. ⟨hal-02327143⟩
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