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Communication Dans Un Congrès Année : 2019

Localized oxide MBE growth on Si by selective etching lift-off for on-chip thermoelectricity

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hal-02325535 , version 1 (22-10-2019)

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  • HAL Id : hal-02325535 , version 1

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Rahma Moalla, Dong Han, Guillaume Saint-Girons, Jean -Louis Leclercq, Romain Bachelet. Localized oxide MBE growth on Si by selective etching lift-off for on-chip thermoelectricity. Journées Nationales des Technologies Emergentes, Nov 2019, Grenoble, France. ⟨hal-02325535⟩
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