Ohmic contacts study of P + N diodes on (111) and (100) diamond
Résumé
Pseudo-vertical P + N diamond diodes are fabricated. We focused on the determination of specific contact resistance of Ti-based contacts for (111) and (100) p-type diamond layers doped around 10 19 at/cm 3 using circular Transfer Length Method (cTLM). Ohmic behavior is obtained and the variation of the specific contact resistance is discussed.
| Origine | Fichiers produits par l'(les) auteur(s) |
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