RF compressibility of topological surface and interface states in metal–hBN–Bi 2 Se 3 capacitors - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Physics: Materials Année : 2019

RF compressibility of topological surface and interface states in metal–hBN–Bi 2 Se 3 capacitors

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hal-02318626 , version 1 (17-10-2019)

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A. Inhofer, T Wilde, J. A Duffy, M. Boukhicha, José Palomo, et al.. RF compressibility of topological surface and interface states in metal–hBN–Bi 2 Se 3 capacitors. Journal of Physics: Materials, 2019, 2 (4), pp.044003. ⟨10.1088/2515-7639/ab383c⟩. ⟨hal-02318626⟩
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