Normally-Off AlGaN/GaN MOS-HEMTs Using Ultra-Thin Al0.45GaN0.55N Barrier and PECVDSiOx as Gate Insulator - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2016

Normally-Off AlGaN/GaN MOS-HEMTs Using Ultra-Thin Al0.45GaN0.55N Barrier and PECVDSiOx as Gate Insulator

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hal-02310128 , version 1 (09-10-2019)

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  • HAL Id : hal-02310128 , version 1

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Ahmed Chakroun, Abdelatif Jaouad, Meriem Bouchilaoun, Osvaldo Arenas, Ali Soltani, et al.. Normally-Off AlGaN/GaN MOS-HEMTs Using Ultra-Thin Al0.45GaN0.55N Barrier and PECVDSiOx as Gate Insulator. International Workshop on Nitride Semiconductors (IWM2016), Oct 2016, Orlando, United States. ⟨hal-02310128⟩
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