Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism - Archive ouverte HAL
Communication Dans Un Congrès Année : 2018

Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism

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hal-02310041 , version 1 (09-10-2019)

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  • HAL Id : hal-02310041 , version 1

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Marie-Clara Pépin, Hassan Maher, Christophe Rodriguez, Ali Soltani. Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism. The compound semiconductor week (CSW), May 2018, Boston, United States. ⟨hal-02310041⟩
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