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Article Dans Une Revue Applied Physics Letters Année : 2019

Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy

Résumé

Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic domain-wall properties. In contrast to previously applied low-temperature electrostatic force microscopy (EFM), X-PEEM readily distinguishes between positive and negative bound charges at domain walls. Our study introduces an X-PEEM-based approach for low-temperature electrostatic potential mapping, facilitating nanoscale spatial resolution and data acquisition times on the order of 0.1–1 s.
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Dates et versions

hal-02303888 , version 1 (11-08-2023)

Identifiants

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J. Schaab, K. Shapovalov, P. Schoenherr, J. Hackl, M. Khan, et al.. Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy. Applied Physics Letters, 2019, 115 (12), pp.122903. ⟨10.1063/1.5117881⟩. ⟨hal-02303888⟩

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