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Article Dans Une Revue Materials Letters Année : 2018

Anisotropic conductivity enhancement in inclined W-Cu columnar films

Résumé

Two immiscible metals (W and Cu) were deposited using two metallic targets by GLAD co-sputtering. A wet chemical etching technique was implemented to remove the copper and modify the typical inclined microstructure into a more porous architecture. The electrical resistivity behavior of the co-sputtered W-Cu film was characterized as a function of temperature before and after wet chemical etching. The results show that the columnar microstructure exhibits metallic-like electrical properties. The average DC electrical resistivity ρ changes from 1.66 × 10−5 Ωm to 4.28 × 10−5 Ωm after etching. The anisotropy at room temperature is A = 1.8 ± 0.1 for as-deposited W-Cu film and reaches 2.8 ± 0.1 after the etching procedure.
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Dates et versions

hal-02300045 , version 1 (29-09-2019)

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Raya El Beainou, Roland Salut, Laurent Robert, Jean Cote, Valérie Potin, et al.. Anisotropic conductivity enhancement in inclined W-Cu columnar films. Materials Letters, 2018, 232, pp.126 - 129. ⟨10.1016/j.matlet.2018.08.120⟩. ⟨hal-02300045⟩
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