Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges

Résumé

A thermal impedance model of single-finger and multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented. The heat flow analysis through the device has to be considered in two diffusion parts: the front-end-of-line (FEOL) diffusion and the back-end-of-line (BEOL) diffusion. Therefore, this new thermal impedance model features multi-poles network which has been incorporated in HiCuM L2 compact model. The HiCuM compact model simulation results are compared with on-wafer low-frequency S-parameters measurements at room temperature highlighting the device frequency dependence of self-heating mechanism. The simulation results are also compared to pulse measurements to improve reliability analysis.
Fichier principal
Vignette du fichier
couret_2019_physical.pdf (740.62 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02276656 , version 1 (03-09-2019)

Identifiants

  • HAL Id : hal-02276656 , version 1

Citer

Marine Couret, Gerhard Fischer, Sebastien Fregonese, Thomas Zimmer, Cristell Maneux. Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges. 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS), Mar 2019, Kita-Kyushu City, Japan. pp.154-159. ⟨hal-02276656⟩
58 Consultations
112 Téléchargements

Partager

Gmail Facebook X LinkedIn More