Phenomenological theory of phase transitions in epitaxial BaTi O3 thin films - Archive ouverte HAL
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2007

Phenomenological theory of phase transitions in epitaxial BaTi O3 thin films

Résumé

Phase transitions in thin epitaxial films of BaTiO3 are described phenomenologically in terms of Landau potentials with sixth-and eighth-order terms. It is established that the phase diagram depends on the electrostrictive constant Q 12. The phase diagrams calculated for different values of Q 12 available in the literature differ qualitatively. The dependence of the misfit strain of a film on the film tetragonality at room temperature is found, which makes it possible to determine the thermodynamic path in the phase diagram for a specific film. The dependences of the spontaneous polarization and dielectric constant of a film on the misfit strain at room temperature are constructed.

Domaines

Matériaux

Dates et versions

hal-02269777 , version 1 (23-08-2019)

Identifiants

Citer

V.B. Shirokov, Yu.I. Yuzyuk, B. Dkhil, V.V. Lemanov. Phenomenological theory of phase transitions in epitaxial BaTi O3 thin films. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75 (22), pp.224116. ⟨10.1103/PhysRevB.75.224116⟩. ⟨hal-02269777⟩
40 Consultations
0 Téléchargements

Altmetric

Partager

More