Thermal simulations of SiC MOSFETs under short- circuit conditions: influence of various simulation parameters - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Thermal simulations of SiC MOSFETs under short- circuit conditions: influence of various simulation parameters

Résumé

The temperature distribution in a Silicon Carbide (SiC) MOSFET during a destructive short-circuit is simulated using a custom 1D-finite difference model implemented using Matlab. Some of the main assumptions usually put forward in the literature dealing with this kind of simulations are tested in this paper. We show that some of those simplifications (model of the heat source, die top-side boundary conditions, etc.), sometime in-spite of common sense, have a great impact on the simulated temperature.
Fichier principal
Vignette du fichier
IWIPP_Tj_fultPaper_2.451.pdf (2.08 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02187486 , version 1 (17-07-2019)

Identifiants

Citer

Yoann Pascal, Mickael Petit, Denis Labrousse, François Costa. Thermal simulations of SiC MOSFETs under short- circuit conditions: influence of various simulation parameters. 2019 IEEE International Workshop on Integrated Power Packaging (IWIPP), Apr 2019, Toulouse, France. ⟨10.1109/iwipp.2019.8799085⟩. ⟨hal-02187486⟩
95 Consultations
772 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More