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Journal Articles Scientific Reports Year : 2019

Impact of tensile strain on low Sn content GeSn lasing

Denis Rainko
  • Function : Author
Zoran Ikonic
  • Function : Author
Nils von den Driesch
  • Function : Author
Daniela Stange
  • Function : Author
Etienne Herth
  • Function : Author
Detlev Grützmacher
  • Function : Author
Dan Buca
  • Function : Author


In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increased defect concentrations and a lower thermal budget regarding processing. In this work we demonstrate strong photoluminescence enhancement in low Sn content Ge 0.94 Sn 0.06 layers by implementing tensile strain. Fitting of the calculated photoluminescence spectra to reproduce our experimental results indicates a strain of ~1.45%, induced via an SiN x stressor layer, which is strong enough to transform the investigated layer into a direct bandgap semiconductor. Moreover, theoretical calculations, using the 8-band k·p model, show the advantages of using low Sn content tensile strained GeSn layers in respect to gain and lasing temperature. We show that low Sn content GeSn alloys have a strong potential to enable efficient room temperature lasers on electronic-photonic integrated circuits. Si photonics is entering the market for short haul interconnects to construct energy efficient data centers and high performance computers. It offers high bandwidths and thus high speed data communication. In this regard, the conventional chip design is replaced or extended by optical devices like waveguides, modulators, detectors and lasers, in which information is processed via photons. For the latter, GeSn lasers have emerged as a viable solution for Si-compatible integrated group-IV laser sources 1,2
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hal-02165210 , version 1 (25-06-2019)



Denis Rainko, Zoran Ikonic, Anas Elbaz, Nils von den Driesch, Daniela Stange, et al.. Impact of tensile strain on low Sn content GeSn lasing. Scientific Reports, 2019, 9 (1), ⟨10.1038/s41598-018-36837-8⟩. ⟨hal-02165210⟩
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